VeritySEM II

*Multiple Systems Available












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Resolution
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Tilt Function

The VeritySEM II system’s exceptional in-line accuracy and process control eliminate more time-consuming and costly off-line wafer cross-sectioning while helping chipmakers to streamline process development, improve device performance and yield, and shorten ramp times to high-volume production.

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Wafer Specification

• Wafer Size: 200MM
• Wafer Shape: SNNF (Semi Notch No Flat)
• Wafer : 6”, 8” or 12”

Electron Optical System

• – Electron Gun Schottky emission source (fei)
• – Accelerating voltage 300V to 2000V
• – Probe Current Low 5pA / Medium 10pA / High 20pA
• – Electromagnetic Lens 3 Stage Electromagnetic Lens
• – System with boosting voltage Beam Deflector Module

Objective Lens

• – Scan Coil 2-Stage Electromagnetic Deflection (X- and Y-Axes)
• – Magnification 1,000x to 400,000x (100um to 0.25um FOV)
• – Wafer imaging ability Entire surface of 8” wafer
• – Aspect Ratio >14 : 1
• – Tilt Function 5 degrees (4 Direction)
• – Resolution 3nm (500V)
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SECS/GEM Communication Interface

Automated Image Archiving Function Always / Online Setup / Never

Measurement Function Average/Maximum/Minimum/Contact Hole/

Line Edge Analysis/CH Analysis/Slope

Measurement Algorithm Normal / Foot / Threshold